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    Title: Bi0.5Sb1.5Te3 與 Cu0.02Bi2Te2.7Se0.3熱電微結構陣列之製備與應用
    The fabrication and application of Bi0.5Sb1.5Te3 and Cu0.02Bi2Te2.7Se0.3 micro-thermoelectric array
    Authors: 吳宗恆
    Wu, Tsung - Heng
    Contributors: 陳洋元
    Chen, Yang-Yuan
    吳宗恆
    Wu, Tsung - Heng
    Keywords: 熱電
    微型陣列
    Date: 2017
    Issue Date: 2017-08-10 10:00:01 (UTC+8)
    Abstract:  本論文為設計微型陣列熱電元件製程與製備,利用金屬遮罩與黃光半導體兩種方式來定義元件中微型陣列的部分,藉此做出熱電元件展現其商業價值。在此研究中利用自製靶材P-type ( Bi0.5Sb1.5Te3 ) 與 N-type (Cu0.02Bi2Te2.7Se0.3 )與控制磁控濺鍍系統之功率與壓力的情況,製作最好的熱電薄膜,而 P-type與 N-type的最佳鍍膜條件皆為功率 30 w 與壓力 7mtorr。接著,將濺鍍完成的薄膜進行 200 0C 6小時的退火動作,藉此提升熱電陣列之效率。電極的部分,選用金作為主要組成,整個研究過程中使用厚度為650 μm的方形三氧化二鋁單晶作為基板(35 x 35 mm2),最後利用半導體黃光製程的方式完成 442 對的熱電陣列,藉此量測電壓電阻。將這些製作完成之元件藉由溫差量測電壓差,將會有幾百個微福特的電壓差產生。
     In our research, we design the micro-thermoelectric array element process and preparation, we use the metal mask and the photoresist to define the micro-thermoelectric array in the element, so as to make the thermoelectric element to be commercial value. In this study, we used for the self-made target P-type (Bi0.5Sb1.5Te3) and N-type (Cu0.02Bi2Te2.7Se0.3 ) , the use controlled RF magnetron sputter system power and pressure conditions, making the best thermoelectric film, the best P-type and N-type are RF power 30 w and pressure 7 mtorr. The best annealing is 200°C for 6 hours. Through the whole process, a square sapphire single crystal with a thickness of 650 μm was used as the substrate (35 x 35 mm2). Finally, a thermoelectric array of 442 pairs was fabricated by Photoresist process to measure the voltage and resistance.
    Reference: [1]In the 1950s there were hopes that semiconductor thermocouples would
    replace mechanical refrigerators, just as semiconductor transistors
    supplanted vacuum tubes.
    [2]莊沅澄,鈷摻雜對FeSi熱電傳輸性質影響之研究,碩士論文,東華大學,2016
    [3]A. Hmood , A. Kadhim , H. Abu Hassan,Lead–ytterbium–telluride thin films prepared using thermal evaporation technique for thermal sensing applications,Superlattices and Microstructures 54 (2013) 204–214
    [4]Changcun Li, Fengxing Jiang , Congcong Liu, Wenfang Wang, Xuejing Li, Tongzhou Wang, Jingkun Xu,A simple thermoelectric device based on inorganic/organic composite thin film for energy harvesting,Chemical Engineering Journal 320 (2017) 201–210
    [5]Wei Zhu, Yuan Deng, Lili Cao,Light-concentrated solar generator and sensor based on flexible thin-film thermoelectric device,Nano Energy 34 (2017) 463–471
    [6]Ugur Erturun , Kaan Erermis , Karla Mossi,Effect of various leg geometries on thermo-mechanical and power generation performance of thermoelectric devices,Applied Thermal Engineering 73 (2014) 128-141
    [7]Ming Tan , Xiuzhen Wang , Yanming Hao , Yuan Deng,Novel Ag nanowire array with high electrical conductivity and fast heat transfer behavior as the electrode for film devices,Journal of Alloys and Compounds 701 (2017) 49-54
    [8]L.D. Zhao , B.-P. Zhang , J.-F. Li , M. Zhou , W.S. Liu,Effects of process parameters on electrical properties of n-type Bi2Te3 prepared by mechanical alloying and spark plasma sintering,Physica B 400 (2007) 11–15
    [9]Mizue Mizoshiri , Masashi Mikami and Kimihiro Ozaki,The effect of Cr buffer layer thickness on voltage generation of thin-film thermoelectric modules,J. Micromech. Microeng. 23 (2013) 115016
    [10]Nanshu Lu, Xi Wang, Zhigang Suo, and Joost Vlassak,Metal films on polymer substrates stretched beyond 50%,APPLIED PHYSICS LETTERS 91, 221909 2007
    [11]M.Mizoshiri , M.Mikami , K. Ozaki,Flexible thin-film thermoelectric generator inserting Cr buffer layer,PowerMEMS 2012, Atlanta, GA, USA, December 2-5, 2012
    [12]HUEY-JIUAN LIN, KAI-JYUN KANG, JENN-DONG HWANG, HSU-SHEN CHU,HONG-HSIN HUANG, and MOO-CHIN WANG,Effect of Annealing Temperature on the Thermoelectric Properties of the Bi0.5Sb1.5Te3 Thin Films Prepared by Radio-Frequency Sputtering,METALLURGICAL AND MATERIALS TRANSACTIONS A VOLUME 44A, MAY 2013—2339
    [13]Takashi Onishi, Masao Mizuno, Tetsuya Yoshikawa , Jun Munemasa, Masataka Mizuno, Teruo Kihara , Hideki Araki, and Yasuharu Shirai,Highly-enhanced reflow characteristics of sputter deposited Cu alloy thin films for large scale integrated interconnections,JOURNAL OF APPLIED PHYSICS 110, 034304 (2011)
    [14]C. C. Wei, P. C. Liu, Chih Chen, Jeffrey C.B. Lee, and I Ping Wang,Relieving Sn whisker growth driven by oxidation on Cu leadframe by annealing and reflowing treatments,JOURNAL OF APPLIED PHYSICS 102, 043521 2007
    [15]Xu Chen , Feng Xue , Jian Zhou , Yao Yao,Effect of In on microstructure, thermodynamic characteristic and mechanical properties of Sn–Bi based lead-free solder,Journal of Alloys and Compounds 633 (2015) 377–383
    [16]Omid Mokhtari , Hiroshi Nishikawa,Correlation between microstructure and mechanical properties of Sn–Bi–X solders,Materials Science & Engineering A651 (2016) 831–839
    [17]Alberto Torres, Luis Hernández, Octavio Domínguez,Effect of Antimony Additions on Corrosion and Mechanical Properties of Sn-Bi Eutectic Lead-Free Solder Alloy,Materials Sciences and Applications, 2012, 3, 355-362
    [18]Th. Heckmann , Th. Souvignet , S. Lepeer , D. Naccache ,Low-temperature low-cost 58 Bismuth e 42 Tin alloy forensic chip re-balling and re-soldering,Digital Investigation 19 (2016) 60-68
    [19]Wen P. Lin • Daniel E. Wesolowski ,Barrier/bonding layers on bismuth telluride (Bi2Te3) for high temperature thermoelectric modules,J Mater Sci: Mater Electron (2011) 22:1313–1320
    [20]Yusuke Sasaki, Masayuki Takashiri,Effects of Cr interlayer thickness on adhesive, structural, and thermoelectric properties of antimony telluride thin films deposited by radio-frequency magnetron sputtering,Thin Solid Films 619 (2016) 195–201
    [21]Complex thermoelectric materials,REVIEW ARTICLE
    [22]Abu Raihan Mohammad Siddique, Shohel Mahmud⁎, Bill Van Heyst,A review of the state of the science on wearable thermoelectric power generators (TEGs) and their existing challenges,Renewable and Sustainable Energy Reviews 73 (2017) 730–744
    [23]YI MA, WARUNA WIJESEKARA and ANDERS E. C. PALMQVIST,YI MA,1,2 WARUNA WIJESEKARA,1 and ANDERS E. C. PALMQVIST1,3,Journal of ELECTRONIC MATERIALS, Vol. 41, No. 6, 2012
    [24]Koksal Yildiz, Unal Akgul , Hartmut S. Leipner , Yusuf Atici ,Electron microscopy study of thermoelectric n-type Bi2(Te0.9Se0.1)3 film deposited by dc sputtering,Superlattices and Microstructures 58 (2013) 60–71
    [25]Haiyu Fang, Bhooshan C. Popere, Elayne M. Thomas, Cheng-Kang Mai, William B. Chang,Guillermo C. Bazan, Michael L. Chabinyc, Rachel A. Segalman,Large-scale integration of flexible materials into rolled and corrugated thermoelectric modules,J. APPL. POLYM. SCI. 2017, DOI: 10.1002/APP.44208
    [26]G. JEFFREY SNYDER, JAMES R. LIM, CHEN-KUO HUANG AND JEAN-PIERRE FLEURIAL,Thermoelectric microdevice fabricated by a MEMS-like electrochemical process,nature materials(AUGUST 2003) 528-531
    Description: 碩士
    國立政治大學
    應用物理研究所
    104755015
    Source URI: http://thesis.lib.nccu.edu.tw/record/#G0104755015
    Data Type: thesis
    Appears in Collections:[應用物理研究所 ] 學位論文

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