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    Please use this identifier to cite or link to this item: http://nccur.lib.nccu.edu.tw/handle/140.119/111791

    Title: Bi0.5Sb1.5Te3 與 Cu0.02Bi2Te2.7Se0.3熱電微結構陣列之製備與應用
    The fabrication and application of Bi0.5Sb1.5Te3 and Cu0.02Bi2Te2.7Se0.3 micro-thermoelectric array
    Authors: 吳宗恆
    Wu, Tsung - Heng
    Contributors: 陳洋元
    Chen, Yang-Yuan
    Wu, Tsung - Heng
    Keywords: 熱電
    Date: 2017
    Issue Date: 2017-08-10 10:00:01 (UTC+8)
    Abstract:  本論文為設計微型陣列熱電元件製程與製備,利用金屬遮罩與黃光半導體兩種方式來定義元件中微型陣列的部分,藉此做出熱電元件展現其商業價值。在此研究中利用自製靶材P-type ( Bi0.5Sb1.5Te3 ) 與 N-type (Cu0.02Bi2Te2.7Se0.3 )與控制磁控濺鍍系統之功率與壓力的情況,製作最好的熱電薄膜,而 P-type與 N-type的最佳鍍膜條件皆為功率 30 w 與壓力 7mtorr。接著,將濺鍍完成的薄膜進行 200 0C 6小時的退火動作,藉此提升熱電陣列之效率。電極的部分,選用金作為主要組成,整個研究過程中使用厚度為650 μm的方形三氧化二鋁單晶作為基板(35 x 35 mm2),最後利用半導體黃光製程的方式完成 442 對的熱電陣列,藉此量測電壓電阻。將這些製作完成之元件藉由溫差量測電壓差,將會有幾百個微福特的電壓差產生。
     In our research, we design the micro-thermoelectric array element process and preparation, we use the metal mask and the photoresist to define the micro-thermoelectric array in the element, so as to make the thermoelectric element to be commercial value. In this study, we used for the self-made target P-type (Bi0.5Sb1.5Te3) and N-type (Cu0.02Bi2Te2.7Se0.3 ) , the use controlled RF magnetron sputter system power and pressure conditions, making the best thermoelectric film, the best P-type and N-type are RF power 30 w and pressure 7 mtorr. The best annealing is 200°C for 6 hours. Through the whole process, a square sapphire single crystal with a thickness of 650 μm was used as the substrate (35 x 35 mm2). Finally, a thermoelectric array of 442 pairs was fabricated by Photoresist process to measure the voltage and resistance.
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    Description: 碩士
    Source URI: http://thesis.lib.nccu.edu.tw/record/#G0104755015
    Data Type: thesis
    Appears in Collections:[應用物理研究所 ] 學位論文

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