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    Please use this identifier to cite or link to this item: http://nccur.lib.nccu.edu.tw/handle/140.119/114850

    Title: Enhanced thermoelectric properties of Cu3SbSe4 by germanium doping
    Authors: 陳洋元
    Chang, Chia-Hsiang
    Chen, Cheng-Lung
    Chiu, Wan-Ting
    Chen, Yang-Yuan
    Contributors: 應物所
    Keywords: Thermoelectric materials;Semiconductors;Sintering;Phonon;Germanium doping
    Date: 2017-01
    Issue Date: 2017-11-21 17:51:16 (UTC+8)
    Abstract: Ge doped Cu3SbSe4 semiconductors with Cu deficiencies were synthesized by melting and spark plasma sintering for the investigation of their thermoelectric transport properties. Ge atoms can successfully substitute Sb lattice sites, and result in lattice shrinkage with increasing Ge content. Doping with Ge not only improves the electrical conductivity but also optimizes the power factor of Cu2.95(Sb1−xGex)Se4. Ge doped specimens also reveal a competition between alloying effects and increased carrier thermal conductivity. The zT enhancement of Ge doped alloys is mainly ascribed to the enhanced power factor and the reduced lattice thermal conductivity. As a result, Cu2.95(Sb0.96Ge0.04)Se4 reaches a maximum zT of 0.7 at 640 K, showing an approximately 35% enhancement over the pristine Cu2.95SbSe4.
    Relation: Materials Letters, Volume 186, Pages 227-230
    Data Type: article
    DOI 連結: https://doi.org/10.1016/j.matlet.2016.10.011
    DOI: 10.1016/j.matlet.2016.10.011
    Appears in Collections:[應用物理研究所 ] 期刊論文

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