Ferromagnetic Interfacial Interaction and the Proximity Effect in a Co2FeAl/(Ga,Mn)As Bilayer

doi:10.1103/PhysRevLett.111.027203

政大機構典藏 > 理學院 > 應用物理研究所 > 期刊論文 > Item 140.119/62307

Please use this identifier to cite or link to this item: http://nccur.lib.nccu.edu.tw/handle/140.119/62307

Title:	Ferromagnetic Interfacial Interaction and the Proximity Effect in a Co2FeAl/(Ga,Mn)As Bilayer
Authors:	郭光宇 Nie, S. H.;Chin, Y. Y.;Liu, W. Q.;Tung, J. C.;Lu, J.;Lin, H. J.;Guo, G. Y.;Meng, K. K.;Chen, L.;Zhu, L. J.;Pan, D.;Chen, C. T.;Xu, Y. B.;Yan, W. S.;Zhao, J. H.
Contributors:	應物所
Date:	2013.07
Issue Date:	2013-12-09 13:38:19 (UTC+8)
Abstract:	The magnetic properties of a Co2FeAl/(Ga,Mn)As bilayer epitaxied on GaAs (001) are studied both experimentally and theoretically. Unlike the common antiferromagnetic interfacial interaction existing in most ferromagnet-magnetic semiconductor bilayers, a ferromagnetic interfacial interaction in the Co2FeAl/(Ga,Mn)As bilayer is observed from measurements of magnetic hysteresis and x-ray magnetic circular dichroism. The Mn ions in a 1.36 nm thick (Ga,Mn)As layer remain spin polarized up to 400 K due to the magnetic proximity effect. The minor loops of the Co2FeAl/(Ga,Mn)As bilayer shift with a small ferromagnetic interaction field of +24 Oe and -23 Oe at 15 K. The observed ferromagnetic interfacial coupling is supported by ab initio density functional calculations. These findings may provide a viable pathway for designing room-temperature semiconductor spintronic devices through magnetic proximity effect.
Relation:	Physical Review Letters, 111(2), 027203-1-027203-5
Data Type:	article
DOI 連結:	http://dx.doi.org/10.1103/PhysRevLett.111.027203
DOI:	10.1103/PhysRevLett.111.027203
Appears in Collections:	[應用物理研究所 ] 期刊論文

Files in This Item:

File	Description	Size	Format
027203-1027203-5.pdf		1707Kb	Adobe PDF	875	View/Open

社群 sharing

Loading...