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    题名: Spatial localization of quantized states responsible for sharp optical transition in AlGaN/GaN superlattice
    作者: 郭光宇
    Cai, Duanjun;Guo, Guang-Yu
    贡献者: 應物所
    日期: 2010.05
    上传时间: 2014-01-24 12:22:50 (UTC+8)
    摘要: We present atomic level studies of the quantized electronic states in AlGaN/GaN superlattice by employing first-principles calculations. Based on the complete band profile, distribution of the discrete energy levels inside the GaNquantum well is obtained and the well-in-well confinement is observed. This second-level well introduces the spatial localization of quantized states. The calculated envelopes of the quantized state densities reveal the spatial overlap between certain electron and hole states. This, together with theoretical absorption spectra, enables us to assign the origin of band-edge peak to the intersubband transition, which governs the optical band gap in the superlatticestructure.
    關聯: Journal of Applied Physics, 107, 103533
    資料來源: http://dx.doi.org/10.1063/1.3410675
    数据类型: article
    DOI 連結: http://dx.doi.org/10.1063/1.3410675
    DOI: 10.1063/1.3410675
    显示于类别:[應用物理研究所 ] 期刊論文

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