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    Please use this identifier to cite or link to this item: http://nccur.lib.nccu.edu.tw/handle/140.119/64469


    Title: Inverse spin Hall effect induced by spin pumping into semiconducting ZnO
    Authors: Lee, Jung-Chuan;Huang, Leng-Wei;Hung, Dung-Shing;Chiang, Tung-Han;Huang, J. C. A.;Liang, Jun-Zhi;Lee, Shang-Fan
    李尚凡
    Contributors: 應物所
    Date: 2014.02
    Issue Date: 2014-03-05 17:53:30 (UTC+8)
    Abstract: The inverse spin Hall effect (ISHE) of n-type semiconductor ZnO thin films with weak spin-orbit coupling has been observed by utilizing the spin pumping method. In the ferromagnetic resonance condition, the spin pumping driven by the dynamical exchange interaction of a permalloy film injects a pure spin current into the adjacent ZnO layer. This spin current gives rise to a DC voltage through the ISHE in the ZnO layer, and the DC voltage is proportional to the microwave excitation power. The effect is sizeable even when the spin backflow is considered.
    Relation: Applied Physics Letters, 104(5), 052401
    Source URI: http://dx.doi.org/10.1063/1.4863750
    Data Type: article
    DOI 連結: http://dx.doi.org/10.1063/1.4863750
    DOI: 10.1063/1.4863750
    Appears in Collections:[應用物理研究所 ] 期刊論文

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