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    题名: Inverse spin Hall effect induced by spin pumping into semiconducting ZnO
    作者: Lee, Jung-Chuan;Huang, Leng-Wei;Hung, Dung-Shing;Chiang, Tung-Han;Huang, J. C. A.;Liang, Jun-Zhi;Lee, Shang-Fan
    李尚凡
    贡献者: 應物所
    日期: 2014.02
    上传时间: 2014-03-05 17:53:30 (UTC+8)
    摘要: The inverse spin Hall effect (ISHE) of n-type semiconductor ZnO thin films with weak spin-orbit coupling has been observed by utilizing the spin pumping method. In the ferromagnetic resonance condition, the spin pumping driven by the dynamical exchange interaction of a permalloy film injects a pure spin current into the adjacent ZnO layer. This spin current gives rise to a DC voltage through the ISHE in the ZnO layer, and the DC voltage is proportional to the microwave excitation power. The effect is sizeable even when the spin backflow is considered.
    關聯: Applied Physics Letters, 104(5), 052401
    資料來源: http://dx.doi.org/10.1063/1.4863750
    数据类型: article
    DOI 連結: http://dx.doi.org/10.1063/1.4863750
    DOI: 10.1063/1.4863750
    显示于类别:[應用物理研究所 ] 期刊論文

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