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政大機構典藏 > 理學院 > 應用物理研究所 > 期刊論文 > Item 140.119/75305

Please use this identifier to cite or link to this item: https://nccur.lib.nccu.edu.tw/handle/140.119/75305

Title:	Enhanced surface mobility and quantum oscillations in topological insulator Bi1.5Sb0.5Te1.7Se1.3 nanoflakes
Authors:	Hsiung, T.-C.;Chen, D.-Y.;Zhao, L.;Lin, Y.-H.;Mou, C.-Y.;Lee, T.-K.;Wu, M.-K.;Chen, Yang Yuan 陳洋元
Contributors:	應物所
Keywords:	Anti-localization effects;Electrical conductance;Enhanced surface;Metallic surface;Quantum oscillations;Surface mobility;Thickness dependence;Topological insulators;Surface states;Electric insulators
Date:	2013-10
Issue Date:	2015-05-26 18:01:10 (UTC+8)
Abstract:	In this study, a series of Bi1.5Sb0.5Te 1.7Se1.3 (BSTS) flakes 80-nm to 140-μm in thickness was fabricated to investigate their metallic surface states. We report the observation of surface-dominated transport in these topological insulator BSTS nanoflakes. The achievement of surface-dominated transport can be attributed to high surface mobility (∼3000 cm2/V s) and low bulk mobility (12 cm2/V s). Up to 90% of the total conductance, the surface channel was estimated based on the thickness dependence of electrical conductance and the result of the Shubnikov-de Hass oscillations in a 200-nm BSTS. The nature of nontrivial Dirac surface states was also confirmed by the weak anti-localization effect. © 2013 AIP Publishing LLC.
Relation:	Applied Physics Letters, 103(16), 論文編號 163111
Data Type:	article
DOI 連結:	http://dx.doi.org/10.1063/1.4826092
DOI:	10.1063/1.4826092
Appears in Collections:	[應用物理研究所 ] 期刊論文

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