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    题名: Enhanced surface mobility and quantum oscillations in topological insulator Bi1.5Sb0.5Te1.7Se1.3 nanoflakes
    作者: Hsiung, T.-C.;Chen, D.-Y.;Zhao, L.;Lin, Y.-H.;Mou, C.-Y.;Lee, T.-K.;Wu, M.-K.;Chen, Yang Yuan
    陳洋元
    贡献者: 應物所
    关键词: Anti-localization effects;Electrical conductance;Enhanced surface;Metallic surface;Quantum oscillations;Surface mobility;Thickness dependence;Topological insulators;Surface states;Electric insulators
    日期: 2013-10
    上传时间: 2015-05-26 18:01:10 (UTC+8)
    摘要: In this study, a series of Bi1.5Sb0.5Te 1.7Se1.3 (BSTS) flakes 80-nm to 140-μm in thickness was fabricated to investigate their metallic surface states. We report the observation of surface-dominated transport in these topological insulator BSTS nanoflakes. The achievement of surface-dominated transport can be attributed to high surface mobility (∼3000 cm2/V s) and low bulk mobility (12 cm2/V s). Up to 90% of the total conductance, the surface channel was estimated based on the thickness dependence of electrical conductance and the result of the Shubnikov-de Hass oscillations in a 200-nm BSTS. The nature of nontrivial Dirac surface states was also confirmed by the weak anti-localization effect. © 2013 AIP Publishing LLC.
    關聯: Applied Physics Letters, 103(16), 論文編號 163111
    数据类型: article
    DOI 連結: http://dx.doi.org/10.1063/1.4826092
    DOI: 10.1063/1.4826092
    显示于类别:[應用物理研究所 ] 期刊論文

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