English  |  正體中文  |  简体中文  |  Items with full text/Total items : 87924/117065 (75%)
Visitors : 23339554      Online Users : 103
RC Version 6.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version
    Please use this identifier to cite or link to this item: http://nccur.lib.nccu.edu.tw/handle/140.119/80589


    Title: Co Thickness Effect on the Dielectric Permittivity of SiO /Co/SiO Films
    Authors: 李尚凡
    Lee, S.F.
    Contributors: 應物所
    Date: 2012-10
    Issue Date: 2016-01-14 17:57:33 (UTC+8)
    Abstract: The effect of Co inserted layer with thickness below 20 nm on the dielectric permittivity of SiO (60 nm)/Co(x nm)/SiO (60 nm) thin films fabricated on glass B270 substrates by the reactive sputtering technique was studied. The dielectric constant is around 7.4 for B270 glass substrate and SiO /B270 film. However, it is rapidly raised up to roughly 55 for all the SiO /Co/SiO samples with the thickness of Co inserted layer larger than 2 nm. From the cross section TEM pictures of the SiO /Co/SiO films with 1 and 2 nm Co thickness, we have experimentally demonstrated that this enhancement behavior of the dielectric constant is due to the growth mechanism of the Cobalt inter-layer from island clusters to continuous Co layer for samples with x larger than 2 nm. The adding of a Co inter-layer redistributes the interface charges between Co and SiO layers, and that enhances both the intrinsic polarization and its dielectric constant. For the magnetic induced dielectric variation, the variation of the dielectric constant also increased with thickness of Co for samples with x larger than 2 nm. A direct observation of a 0.04–0.20% dielectric variation is induced by external magnetic field. However this increase behavior is roughly saturated for applied magnetic field roughly above 60 Oe. The magnetodielectric properties in SiO /Co/SiO films are manifested and it has potential for a ferroic sensor application.
    Relation: IEEE Trans. Magn., 48(11), 3936-3939
    Data Type: article
    DOI 連結: http://dx.doi.org/10.1109/TMAG.2012.2204433
    DOI: 10.1109/TMAG.2012.2204433
    Appears in Collections:[應用物理研究所 ] 期刊論文

    Files in This Item:

    File Description SizeFormat
    39363939.pdf679KbAdobe PDF514View/Open


    All items in 政大典藏 are protected by copyright, with all rights reserved.


    社群 sharing

    著作權政策宣告
    1.本網站之數位內容為國立政治大學所收錄之機構典藏,無償提供學術研究與公眾教育等公益性使用,惟仍請適度,合理使用本網站之內容,以尊重著作權人之權益。商業上之利用,則請先取得著作權人之授權。
    2.本網站之製作,已盡力防止侵害著作權人之權益,如仍發現本網站之數位內容有侵害著作權人權益情事者,請權利人通知本網站維護人員(nccur@nccu.edu.tw),維護人員將立即採取移除該數位著作等補救措施。
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback