政大機構典藏-National Chengchi University Institutional Repository(NCCUR):Item 140.119/116895

English | 正體中文 | 简体中文 | Post-Print筆數 : 27 | 全文笔数/总笔数 : 112881/143847 (78%)
造访人次 : 50298956 在线人数 : 533

RC Version 6.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.

政大機構典藏 > 理學院 > 應用物理研究所 > 期刊論文 > Item 140.119/116895

请使用永久网址来引用或连结此文件: https://nccur.lib.nccu.edu.tw/handle/140.119/116895

题名:	Effects of Os spacer layers on the thermal stability and magnetic properties of FePt films on Si(100)
作者:	姚永德
贡献者:	應物所
日期:	2010-05
上传时间:	2018-04-18 14:35:46 (UTC+8)
摘要:	The thermal stability, interlayer diffusion, and magnetic properties of FePt(100 nm) single-layer and multilayer [Os(5 nm)/FePt(25 nm)] 4 [Os(5 nm)/FePt(25 nm)]4 films on a Si(100) substrate with/without a 10-nm-thick Os underlayer have been studied as functions of the annealing temperatures between 400 and 800 °C 800 °C. The insertion of a thin Os layer into the FePt and Si(100) interface results in better thermal stability. No diffusion evidence was found in samples with an Os underlayer for annealing temperatures up to 700 °C 700 °C , as seen from x-ray, transmission electron microscopy, and magnetic studies. We have experimentally demonstrated that the Os underlayer can effectively prevent the diffusion of the intermixing between the FePt layer and the Si(100) substrate for temperatures up to 700 °C 700 °C . As a result of this study, the Os has potential to be a better diffusion barrier to prevent the diffusion of the FePt film on a Si(100) substrate from forming an ordered face centered tetragonal (fct) L1 0 L10 hard magnetic phase.
關聯:	Journal of Applied Physics, Volume 107, Issue 9 , 09A714
数据类型:	article
DOI 連結:	https://doi.org/10.1063/1.3337643
DOI:	10.1063/1.3337643
显示于类别:	[應用物理研究所 ] 期刊論文

文件中的档案:

档案	描述	大小	格式	浏览次数
index.html		0Kb	HTML2	519	检视/开启

在政大典藏中所有的数据项都受到原著作权保护.

社群 sharing

著作權政策宣告 Copyright Announcement

1.本網站之數位內容為國立政治大學所收錄之機構典藏，無償提供學術研究與公眾教育等公益性使用，惟仍請適度，合理使用本網站之內容，以尊重著作權人之權益。商業上之利用，則請先取得著作權人之授權。
The digital content of this website is part of National Chengchi University Institutional Repository. It provides free access to academic research and public education for non-commercial use. Please utilize it in a proper and reasonable manner and respect the rights of copyright owners. For commercial use, please obtain authorization from the copyright owner in advance.

2.本網站之製作，已盡力防止侵害著作權人之權益，如仍發現本網站之數位內容有侵害著作權人權益情事者，請權利人通知本網站維護人員(nccur@nccu.edu.tw)，維護人員將立即採取移除該數位著作等補救措施。
NCCU Institutional Repository is made to protect the interests of copyright owners. If you believe that any material on the website infringes copyright, please contact our staff(nccur@nccu.edu.tw). We will remove the work from the repository and investigate your claim.

数据加载中.....