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政大機構典藏 > 理學院 > 應用物理研究所 > 期刊論文 > Item 140.119/63530

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Title:	Spatial localization of quantized states responsible for sharp optical transition in AlGaN/GaN superlattice
Authors:	郭光宇 Cai, Duanjun;Guo, Guang-Yu
Contributors:	應物所
Date:	2010.05
Issue Date:	2014-01-24 12:22:50 (UTC+8)
Abstract:	We present atomic level studies of the quantized electronic states in AlGaN/GaN superlattice by employing first-principles calculations. Based on the complete band profile, distribution of the discrete energy levels inside the GaNquantum well is obtained and the well-in-well confinement is observed. This second-level well introduces the spatial localization of quantized states. The calculated envelopes of the quantized state densities reveal the spatial overlap between certain electron and hole states. This, together with theoretical absorption spectra, enables us to assign the origin of band-edge peak to the intersubband transition, which governs the optical band gap in the superlatticestructure.
Relation:	Journal of Applied Physics, 107, 103533
Source URI:	http://dx.doi.org/10.1063/1.3410675
Data Type:	article
DOI 連結:	http://dx.doi.org/10.1063/1.3410675
DOI:	10.1063/1.3410675
Appears in Collections:	[應用物理研究所 ] 期刊論文

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