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    題名: Enhanced thermoelectric performance in Bi-doped p-type AgSbTe2 compounds
    作者: Mohanraman, R.;Sankar, R.;Chou, F.C.;Lee, C.H.;Chen, Yang Yuan
    陳洋元
    貢獻者: 應物所
    關鍵詞: Atomic weights;Lattice thermal conductivity;Low thermal conductivity;Medium temperature;Power factors;Reduction of thermal conductivity;Thermoelectric performance;Thermoelectric properties;Chemical elements;Doping (additives);Electric power factor;Phonon scattering;Thermal conductivity;Thermoelectric equipment;Thermoelectric power;Thermoelectricity;Bismuth compounds
    日期: 2013-10
    上傳時間: 2015-05-26 18:00:56 (UTC+8)
    摘要: The influence of bismuth (Bi) substitution on the thermoelectric properties of AgSbTe2 compounds was investigated and compared with the undoped AgSbTe2. The addition of Bi dopants not only resulted in a reduction in thermal conductivity but also markedly increased the thermopower in the Ag(Sb1-xBix)Te2 series. Additional phonon scatterings were created by Bi doping and led to a reduction of thermal conductivity. The lattice thermal conductivity is significantly reduced which could be ascribed to enhancement of phonon scattering by dopants with greater atomic weight. In addition, the thermopower was enhanced, which was attributed to the electron-filtering effects caused by the nanoscaled microstructures. Because of the extremely low thermal conductivity (0.48 Wm-1K -1) and moderate power factor of AgBi0.05Sb 0.95Te2, a maximum ZT value of (1.04 ± 0.08) was reached at 570 K; yielding an enhancement of greater than 10% compared with an undoped AgSbTe2. this result shows promising thermoelectric properties in the medium temperature range. © 2013 AIP Publishing LLC.
    關聯: Journal of Applied Physics, 114(16), 論文編號 163712
    資料類型: article
    DOI 連結: http://dx.doi.org/10.1063/1.4828478
    DOI: 10.1063/1.4828478
    顯示於類別:[應用物理研究所 ] 期刊論文

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