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题名:	Enhanced thermoelectric properties of Cu3SbSe4 by germanium doping
作者:	陳洋元 Chang, Chia-Hsiang Chen, Cheng-Lung Chiu, Wan-Ting Chen, Yang-Yuan
贡献者:	應物所
关键词:	Thermoelectric materials;Semiconductors;Sintering;Phonon;Germanium doping
日期:	2017-01
上传时间:	2017-11-21 17:51:16 (UTC+8)
摘要:	Ge doped Cu3SbSe4 semiconductors with Cu deficiencies were synthesized by melting and spark plasma sintering for the investigation of their thermoelectric transport properties. Ge atoms can successfully substitute Sb lattice sites, and result in lattice shrinkage with increasing Ge content. Doping with Ge not only improves the electrical conductivity but also optimizes the power factor of Cu2.95(Sb1−xGex)Se4. Ge doped specimens also reveal a competition between alloying effects and increased carrier thermal conductivity. The zT enhancement of Ge doped alloys is mainly ascribed to the enhanced power factor and the reduced lattice thermal conductivity. As a result, Cu2.95(Sb0.96Ge0.04)Se4 reaches a maximum zT of 0.7 at 640 K, showing an approximately 35% enhancement over the pristine Cu2.95SbSe4.
關聯:	Materials Letters, Volume 186, Pages 227-230
数据类型:	article
DOI 連結:	https://doi.org/10.1016/j.matlet.2016.10.011
DOI:	10.1016/j.matlet.2016.10.011
显示于类别:	[應用物理研究所 ] 期刊論文

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