政大機構典藏-National Chengchi University Institutional Repository(NCCUR):Item 140.119/114850

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題名:	Enhanced thermoelectric properties of Cu3SbSe4 by germanium doping
作者:	陳洋元 Chang, Chia-Hsiang Chen, Cheng-Lung Chiu, Wan-Ting Chen, Yang-Yuan
貢獻者:	應物所
關鍵詞:	Thermoelectric materials;Semiconductors;Sintering;Phonon;Germanium doping
日期:	2017-01
上傳時間:	2017-11-21 17:51:16 (UTC+8)
摘要:	Ge doped Cu3SbSe4 semiconductors with Cu deficiencies were synthesized by melting and spark plasma sintering for the investigation of their thermoelectric transport properties. Ge atoms can successfully substitute Sb lattice sites, and result in lattice shrinkage with increasing Ge content. Doping with Ge not only improves the electrical conductivity but also optimizes the power factor of Cu2.95(Sb1−xGex)Se4. Ge doped specimens also reveal a competition between alloying effects and increased carrier thermal conductivity. The zT enhancement of Ge doped alloys is mainly ascribed to the enhanced power factor and the reduced lattice thermal conductivity. As a result, Cu2.95(Sb0.96Ge0.04)Se4 reaches a maximum zT of 0.7 at 640 K, showing an approximately 35% enhancement over the pristine Cu2.95SbSe4.
關聯:	Materials Letters, Volume 186, Pages 227-230
資料類型:	article
DOI 連結:	https://doi.org/10.1016/j.matlet.2016.10.011
DOI:	10.1016/j.matlet.2016.10.011
顯示於類別:	[應用物理研究所 ] 期刊論文

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